The new infrared material InAs0.07Sb0.93 thin films were prepared on lattice mismatched GaAs substrate with the method of Molecular Beam Epitaxy (MBE). Then electrodes were prepared on the InAs0.07Sb0.93 film by using electron beam lithography. The blackbody response, dark current and photocurrent of the prepared photoconductive device were measured with blackbody and fourier transform infrared spectroscopy. A wide-band infrared detector with the response peak at around 4μm and FWHM of 4μm is obtained.