In order to solve the problem of photoelectric detection of graphene detectors, a new integrated circuit structure based on graphene detectors was designed according to the change of resistance of illuminated pixels of graphene detectors. The integrated circuit structure mainly includes front-end bias circuit, operational amplifier, switch and feedback capacitor. The circuit mainly utilizes the characteristics that dark pixel resistance does not change with illumination, but the resistance of photosensitive pixel changes with illumination intensity. The current of photosensitive pixel branch under illumination condition changes. And the difference of current from photosensitive pixel branch to dark pixel branch is taken as the light response current, and the CTIA integral circuit is used to integrate the current. The light response current is converted to the integral voltage, and then the detection and output of the light response signal of the graphene detector are realized. In this paper, the related main circuit design is analyzed, and the circuit simulation is completed based on the cadence ADE simulation environment. The simulation results show that the photoresponse of graphene detector under different illumination conditions can be converted to the corresponding integrated voltage with the integrated circuit in this paper. Therefore, the designedintegrated circuit can meet the needs of the graphene detector for the detection of light response, and it is of great significance for graphene materials to enter the field of photodetectors.