Infrared detectors working in the medium and long wavelength can be widely used in the fields of space imaging, military, communication and so on. Antimony-based InAsSb materials are ideal materials for fabricating long-wave uncooled photon detectors due to their special properties. Auger recombination lifetime is one of the important factors affecting the performance of detectors . In this paper, Auger recombination lifetime of n and p type InAsxSb1-x materials changing with temperature, As composition and carrier concentration is studied by Matlab software. For the determined As component, the longer Auger composite life can be obtained by optimizing working temperature and carrier concentration. When the carrier concentration is 3.2×10¹⁵cm-3 and the temperature is 200K, the maximum Auger lifetime of n-type InAs0.35Sb0.65 is 2.91×10-9s.