Metalorganic chemical vapour deposition (MOCVD) was employed to grow InAs quantum dots (QDs) and low temperature QDs caps with different composition and thickness, and photoluminescence (PL) and time-resolved photoluminescence (TRPL) was used to study the characteristics of QDs with different cap layers. Flow-rate modulation epitaxy (FME) and conventional methods were utilized to grow low temperature cap of InAs QDs. Experimental results indicate that the PL intensity of QWs is stronger when the cap was grown by FME, and its TRPL life time reaches 0.6ns, which is much longer than the samples prepared by the conventional method.