激光退火对CaSrSiO4∶Tb3+纳米荧光粉光致发光特性的改善
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(1. 辽宁师范大学 物理与电子技术学院, 辽宁 大连 116029;2. 大连理工大学 物理学院, 辽宁 大连 116024)

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国家自然科学基金项目(11004092);辽宁省科技厅项目(201602455).*通信作者:李成仁E-mail:lnnulicr@aliyun.com


Improvement of Laser Annealing on Photoluminescence Characteristics of CaSrSiO4∶Tb3+ Nanophosphor
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(1. School of Physics and Electronic Technology, Liaoning Normal University, Dalian 116029, CHN;2. School of Physics, Dalian University of Technology, Dalian 116024, CHN)

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    摘要:

    采用高温固相反应法制备了不同掺Tb浓度的CaSrSiO4纳米荧光粉。TEM照片显示粉末颗粒为球状,直径30~50nm。XRD主要衍射峰与CaSrSiO4基质基本一致,表明Tb离子掺入对CaSrSiO4晶体结构影响较小。285nm紫外光激发下,观测到强的紫外、蓝光和绿光等光谱,优化掺Tb浓度为0.7%。最后用CO2激光器对CaSrSiO4∶0.3Tb3+荧光粉进行退火,发现光谱增强50%以上。同时讨论了退火工艺参数对荧光粉光致发光特性的影响。

    Abstract:

    A series of CaSrSiO4 nanophosphors with different Tb3+-doped concentrations have been prepared by high-temperature solid-state reaction method. SEM image shows that the powder particles show a shape of ball and a diameter of about 30~50nm. XRD pattern of the samples doped Tb3+ ions is basically consistent with that of CaSrSiO4 matrix, indicating that Tb3+ dopant has little influence on the crystal structure of CaSrSiO4 powder. Under the 285nm excitation, the intense ultraviolet, blue and green PL spectra are observed and the optimum Tb3+-doped concentration is 0.7%. Finally, the CaSrSiO4∶0.3Tb3+ phosphor is annealed by CO2 laser and its spectral intensity is enhanced by more than 50%. At the same time, the effect of annealing process parameters on PL characteristics of CaSrSiO4∶Tb3+ phosphor is discussed.

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李成仁,王英贺,赵倩昀,王晓娜,徐奇.激光退火对CaSrSiO4∶Tb3+纳米荧光粉光致发光特性的改善[J].半导体光电,2021,42(2):236-239, 263. LI Chengren, WANG Yinghe, ZHAO Qianyun, WANG Xiaona, XU Qi. Improvement of Laser Annealing on Photoluminescence Characteristics of CaSrSiO4∶Tb3+ Nanophosphor[J].,2021,42(2):236-239, 263.

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  • 收稿日期:2020-12-18
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  • 在线发布日期: 2021-04-30
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