A CCD image sensor based on P-type high resistivity silicon substrate is designed and developed. The effective array size of the device is 6144×526 pixel, and the pixel size is 15 microns ×15 microns. The device adopts the non-photosensitive area P-well injection design, which improves the characteristics of the CCD amplifier based on P-type high-resistance silicon substrate. The linear working area of the device amplifier is extended from 16.0V ～ 16.5V before optimization to 10.0V ～ 14.0V, and the DC gain is increased from 0.50 to 0.85 before optimization. The device uses visible and near-infrared backillumination antireflection film design, the average quantum efficiency of the device is better than 0.85 in the wavelength range of 400nm ～ 750nm, and the quantum efficiency can reach 0.43 in the near-infrared wavelength of 900nm. The device is designed by non-impalntation composite energy injection technology, and the MTF of the device is better than 0.40 under composite light.