1060nm semiconductor lasers are widely applied in space LiDAR, high-energy laser systems and so on. Due to the high stress of InGaAs on GaAs substrate, 1060nm semiconductor lasers usually have large amount of defect. Besides, 1060nm semiconductor lasers always conduct thin waveguide layer for large confinement factor, which results in large cavity loss and non-radiation combination, so it leads to poor slope efficiency and high-temperature characteristics。Also,the conventional GaAs barrier cannot confine the carriers in the quantum well significantly, which degrades its performance when the operation temperature is high. In this paper, because the growth condition was optimized and stress-compensated quantum wells were applied, its stress and barrier height were well controlled. Enlarging the N cladding thickness also reduced the loss in the cavity. Consequently, we invented a high-performance 1060nm semiconductor laser, of which slope efficiency is as high as recorded 0.9W/A at both room and high temperature. Through the buried DFB grating, it also realized operation in single longitudinal mode with high slope efficiency of 0.7W/A.