An integrated CCD-CMOS image sensor with an array size of 1024×256 is proposed in this paper to meet the need for high-precision digitization and high-speed output of CCD image sensor signals. Technologies related to CCD pixel device structure, CMOS readout circuit, 3D integration with heterogeneous interconnection, and high-density pin packaging were developed to address issues such as low compatibility between CCD and CMOS processes, the complexity of integration by interconnection, thereby achieving both adequate matching and high performance at connection ports between circuit dies. This new image sensor realizes the combination of high-precision CCD signal digitization, high-speed output, and multiple dies integration, filling the domestic gap in CCD-CMOS 3D integration technology. Test results show that the CCD-CMOS device has a normal photoresponse and imaging ability, achieving good imaging results from both array sides without any dark or broken columns. The connectivity rate of interconnection reaches 99.9%, meeting the needs of 3D integration. As an integrated detector device, it offers large full well capacity and high sensitivity imaging (FWC e- count reaching 165.28ke-, peak QE reaching 86.1%), high-precision digitization (12bit), and high-speed output (row readout frequency reaching 100.85kHz), thus meeting the requirements of integrated, digitized, miniaturized multispectral detecting and imaging systems.