This paper presents the design of a near-infrared(NIR)-enhanced silicon-based single-photon avalanche diode(SPAD)using simulation software like Silvaco and TFCalc. This design employs a planar reach-through SPAD structure and achieves NIR enhancement via the optimization of the antireflection coatings，absorption layer，and doping distribution within active region，among other factors. A black silicon structure is utilized to improve the NIR single-photon detection efficiency，whereas annealing and gettering processes are employed to repair the damage， remove impurities，and reduce the dark count rate. The black silicon NIR-enhanced silicon single-photon detector is fabricated by a wet etching process using a mixed solution of nitric acid， hydrofluoric acid，phosphoric acid，and sulfuric acid. Test results demonstrate that the detector achieves single-photon detection rates of 59. 8% and 13. 1% at 905 and 1 060 nm，respectively. Compared with devices lacking the integrated black silicon NIR enhancement structure，the proposed structure improves the detection rates by 42% and 336% at 905 and 1 060 nm，respectively. The dark count rates of the black silicon detector are less than 500 and 2 000 Hz at 263 and 293 K， respectively，comparable to that of a conventional planar SPAD. Owing to its process compatibility， the proposed NIR-enhanced technique has considerable potential for significantly improving the sensitivity of various photodetectors，including SPAD，dTOF-CIS，and SPM.