The quality of the ZnO film is a key factor determining the performance of Ag/ ZnO Schottky ultraviolet photodetectors(UV PDs). Al doping can improve the quality of the ZnO film，thereby enhancing the performance of the device. To further investigate the influence of AZO material parameters on the performance of Ag/AZO/Ag Schottky UV PDs，this study employed Silvaco TCAD simulation software to evaluate the influence of AZO film thickness and doping concentration on the device performance. The results show that the photocurrent of the Ag/AZO/Ag Schottky UV PDs is 5. 12×10.6 A，the responsivity is 0. 41 A/W，the specific detectivity is 1. 72×1010 Jones， and the external quantum efficiency is 147. 4%， which are respectively 260%，180%，148%，and 176% higher than those of the Ag/ZnO devices. When the doping concentration of the AZO film is approximately 1×1017 cm.3 and the thickness is 0. 3~0.5 μm，the device performance is improved.