In this study，graphite films were prepared via chemical vapor deposition(CVD)at 1 700° C using methyltrichlorosilane(MTS)to investigate the regulatory effect of 4H-SiC surface polarity on the growth of graphite film. The phase structure and micromorphology of the films were systematically analyzed and the flexibility and conductivity of the exfoliated films were verified. The results showed that the growth of the film was governed by the polarity of the substrate；the graphite film exhibited two-dimensional layered growth on the Si-face with a thickness of ~1. 94 μm，whereas it exhibited vertical columnar growth on the C-face reaching a thickness of ~8. 11 μm with significantly increased defects. Specifically，the graphite film grown on the Si-face exhibited an intrinsic conductivity of 1. 5×10. S/cm with no visible cracks at a bending diameter of 0. 8 cm. The film remained electrically continuous after 100 continuous bending cycles， with the variation in resistance eventually stabilizing at ~33. 7%. The findings of this study revealed distinct microscopic growth behaviors on different polar surfaces of the 4H-SiC substrate and confirmed the inherent flexibility and conductivity of the graphite film grown on the Si-face.