Au-Ag双元共掺杂对 ZnS薄膜性能的影响
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(1.武汉科技大学,武汉 430081;2.中国科学院高能物理研究所,北京 100049)

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李佩伦(1999-),女,四川省广安市人,硕士,主要研究方向为 Ⅱ.Ⅵ族半导体薄膜;张仁刚(1973-),男,湖北省武汉市人,教授,博士,主要研究方向为半导体薄膜。

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TN304. 2

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Effects of Au-Ag Co-Doping on Properties of ZnS Thin Films
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(1. Wuhan University of Science and Technology,Wuhan 430081,CHN;2. Institute of High Energy Physics, Chinese Academy of Sciences,Beijing 100049,CHN)

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    摘要:

    为探究 Au-Ag共掺杂对 ZnS薄膜微观结构与性能的影响,文章采用射频磁控溅射法制备了不同 Ag含量的 ZnSAu∶Ag薄膜,并经 600℃真空硫化退火。利用 XRD、SEM、AFM、紫外-可见光谱及正电子湮没谱(DBS)等进行系统表征。结果表明,所有薄膜为立方相且沿(111)面择优生长,Au/Ag的引入促进了薄膜晶粒的生长和厚度的增加。随着 Ag浓度增加,薄膜光学带隙单调递减;微观缺陷分析证实,Au/Ag原子有效占据了 Zn位点,填补了锌空位(VZn),减少了晶格缺陷,同时降低了薄膜的带隙值。该研究为调控 ZnS的光电性能提供了参考。

    Abstract:

    To investigate the effects of Au-Ag co-doping on the microstructure and properties of ZnS thin films,ZnSAu∶Ag thin films with varying Ag contents were prepared using radio-frequency(RF)magnetron sputtering and were subsequently subjected to vacuum sulfurization annealing at 600℃ . Systematic characterizations were conducted using X-ray diffraction analysis, scanning electron microscopy, atomic force microscopy, UV-Vis spectroscopy, and Doppler broadening spectroscopy. The results demonstrate that all films exhibit a cubic phase with a preferred orientation along the(111)plane,and the introduction of Au/Ag significantly promotes a dense, vertical columnar growth. With increasing Ag concentration,the optical bandgap of the film decreases monotonically. Furthermore,microscopic defect analysis confirms that the large-radius Au/Ag atoms effectively occupy the Zn sites. Therefore,this co-doping strategy successfully fills the intrinsic zinc vacancies(VZn)and optimizes the lattice stoichiometry. Consequently,the bandgap is effectively reduced and the crystalline quality is significantly improved,providing a valuable reference for precise tuning of the optoelectronic properties of ZnS.

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李佩伦,张仁刚,张鹏,曹兴忠,王宝义. Au-Ag双元共掺杂对 ZnS薄膜性能的影响[J].半导体光电,2026,47(4):690-695. LI Peilun, ZHANG Rengang, ZHANG Peng, CAO Xingzhong, WANG Baoyi. Effects of Au-Ag Co-Doping on Properties of ZnS Thin Films[J].,2026,47(4):690-695.

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  • 收稿日期:2026-03-02
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  • 在线发布日期: 2026-08-25
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