To address the demand for ultra-high sensitivity imaging devices in deep space detection，low-illumination space remote sensing，and other fields，this study investigated the charge transport technology of a 210 μm×210 μm ultra-large pixel Time Delay and Integration Charge Coupled Device(TDICCD). The pixel size of the device is 210 μm×210 μm，which is the first such ultra-large pixel CCD developed worldwide，with a designed full well capacity greater than 10 000 ke.. The core technical bottleneck is how to achieve efficient transfer and readout of ultra-large charge packets within the limited line period and integration time. This study proposes a novel device architecture of vertical CCD subdivision-vertical CCD summation-horizontal CCD subdivision-output node summation. By subdividing the polysilicon gates of the vertical and horizontal CCDs，a single large charge packet is split into multiple small charge packets for parallel transfer. By keeping the number of driving pulses unchanged，the transfer time of the large charge packet is greatly shortened，and the signal is merged and restored through the summation potential well. Device design and process implementation were completed based on this architecture. Test results show that the full well capacity of the device reaches 17 895 ke .，and the single-stage charge transfer efficiency is greater than 99. 999%，which effectively solves the charge transfer problem of ultra-large pixel TDICCDs and provides a new technical path for the development of ultra-high sensitivity TDICCDs.