By using two-dimensional simulation software of sentaurus TCAD, the dispersion characteristics of lateral-blooming interline transfer charge coupled device(IT-CCD) were simulated, thus the simulation model based on sentaurus TCAD software was established. The influence of n-region and p-well of vertical CCD on dispersion characteristics were simulated. It is indicated that the implant energy of both the photosensitive n-region and the vertical CCD p-well should be controlled in the range of 450~550KeV and 200~600KeV, respectively, and the implant dose should be in the range of 4.0×1012~8.0×1012cm-2。