TiO2 thin films were prepared on glass substrate by RF magnetron sputtering. Scanning electron microscopy figures and Raman spectrums of TiO2 thin films before and after annealing process were studied to identify the structure of TiO2 thin films. The results show that the film after annealing treatment was anatase, representing good crystal structure. Al/TiO2/Pt schottky diode was then prepared based on these parameters and the related I-V-T tests were carried out at the temperature of 153~433K. The following results were obtained: Al/TiO2/Pt schottky diode possesses great rectifying effect under all temperature; the ideality factor n increases as temperature rises, while schottky barrier height (SBH) decreases; when T=433K, n is 1.31 and SBH is 0.73, indicating this schottky diode is close to an ideal Schottky diode.