CMOS image sensor (CIS) used in the space or nuclear radiation environments will be susceptible to the total ionizing dose (TID) radiation damage, which can even induce the CIS functional failure. In this paper, the TID radiation effects on the CIS are reviewed by summarizing the investigations from different manufacture technologies including micron, super deep submicron, and nano size, from different pixel structures such as 3T PD (Photodiode) and 4T PPD (Pinned Photodiode) and from different types of isolated oxides such as the local oxidation of silicon (LOCOS) and shall trenh isolation (STI). The investigation progresses of radiation hardening technology on the CIS are briefly introduced by the device structure technology, operation mode, and the the readout circuit hardening design. The questions to be further investigated on the TID radiation effects and hardening technology on the CIS are put forward.