背照式InGaN紫外探测器的制备与数值模拟
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国家自然科学基金项目(61106097; 61204134; 11304335);


Fabrication and Numerical Simulation of Back-Illuminated InGaN Ultraviolet Photodetector
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    摘要:

    研究了背照式InGaN p-i-n结构的紫外探测器的制备与数值模拟。通过低压金属有机化学气相沉积(MOCVD)方法生长p-GaN/i-InGaN/n-GaN外延片,采用标准的Ⅲ-Ⅴ族器件制备工艺,成功制备出p-i-n结构的InGaN紫外探测器。探测器台面半径为30μm,在-5V偏压下暗电流为-6.47×10-12 A,对应的电流密度为2.29×10-7 A/cm2。该探测器响应波段为360380nm,在371nm处达到峰值响应率为0.21A/W,对应的外量子效率为70%,内量子效率为78.4%。零偏压下,优值因子R0A=5.66×107Ω·cm2,对应的探测率D*=2.34×1013 cm·Hz1/2·W-1。同时,利用Silvaco TCAD软件进行数值模拟,响应率曲线仿真值与实验值拟合较好。?更多还原

    Abstract:

    The fabrication and numerical simulation of the ultraviolet photodetector with the back-illuminated InGaN p-i-n structure was studied in this paper. The p-GaN/i-InGaN/n-GaN epitaxial wafers were grown with the low-pressure metal organic chemical vapor deposition (MOCVD) method. The InGaN ultraviolet photodetector with p-i-n structure was fabricated by the standard Ⅲ-Ⅴ group device fabrication processes. The mesa radius of the photodetector was 30μm, the dark current was -6.47×10-12A at the bias of -5V and the current density was 2.29×10-7A/cm2. The spectral response band was achieved in the 360~380nm and the peak responsivity was 0.21A/W at 371nm, the corresponding external quantum efficiency and the internal quantum efficiency were 70% and 78.2%, respectively. The R0A value was up to 5.66×107Ω·cm2 at the zero bias, and the corresponding detection rate D* was 2.34×1013cm·Hz1/2·W-1. In addition, the photodetector was numerical simulated by Silvaco TCAD software, the spectral response curve was in good agreement with the experimental result.

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  • 收稿日期:2016-12-22
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  • 在线发布日期: 2017-09-05
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