The first-order Bragg grating structure of 975nm distributed feedback semiconductor laser is designed and optimized. The grating with a period of 148nm is fabricated by the nanoimprint and dry etching process, and the etching process parameters of the reactive gas flow ratio, chamber pressure and bias power are optimized and determined. The scanning electron microscopy measurement shows that the grating has a period of 148nm, duty cycle of about 0.5, appropriate depth, with perfect surface morphology, good fringe continuity and uniformity. The fabricated grating is applied to the 975nm distributed feedback (DFB) laser. The laser shows good output performance, and thermal drift coefficient of wavelength on the DFB laser is low, the results indicated that wavelength is well-locked by the grating.