SnF2-doped SnO2 thin films (FTO) were deposited on quartz glass substrates by e-beam evaporation. The effects of annealing temperatures on the structure and optoelectronic properties were investigated.The results show that the increasing of annealing temperature promotes the growth and crystallinity of FTO thin films, in addition, the average values of transmittance in the visible region get increased, and the adsorption was found to blue-shift. The increment in band gap was attributed to Moss-Burstein effect resulted from the high carrier concentration in FTO thin films annealed at higher temperatures. The electrical properties of thin film were improved a lot with increasing the annealing temperature. The resistivity, carrier concentration and carrier mobility were achieved to be 2.74×10-3 Ω·cm, 2.09×1020 cm-3 and 9.93 cm2·V-1·s-1 for the FTO thin films annealed at 700 ℃, respectively.