Ga-doped SnO2 thin films were produced on quartz glass substrates by E-beam evaporation. X-ray diffraction, atomic force microscope (AFM), UV-Vis-NIR spectrophotometer and photoluminescence spectroscopy were used to investigate the influences of annealing temperature on the structure and photoluminescence properties of Ga-doped SnO2 thin films. It’s found that with increasing the annealing temperature, the size of grains becomes bigger, the band gap becomes wider and the intensity of photoluminescence increases. The results show that blue-purple light emitting SnO2∶Ga thin films were manufactured successfully and the remarkable photoluminescence of the SnO2∶Ga thin film annealed at 700℃ is attributed to removal of non-radiative centers at higher temperature.