Dielectric capping ligands on the quantum dots (QDs) surface are the common challenge of solar cells with QDs active layer, which greatly limits the carrier transmission and device performance. In this work, for AgBiS2 quantum-dots active layer, different short-chain ligands were used to replace the long-chain capping ligands oleic acid on QDs by using the solid state ligand exchange method. The influences of ligands on the materials HOMO/LUMO levels and performance of AgBiS2-PTB7 device were discussed. It is shown that the TMAI ligands delivers the best device performance with PCE of 2.06%, Voc of 0.412V, Jsc of 9.23mA/cm2 and FF of 53.4%.