The high-voltage flip-chip (HVFC) GaN light-emitting diodes (LED) with omni-directional reflector (ODR) structure was optimized on the basis of traditional indium-tin-oxide (ITO)+ distributed bragg Bragg reflector (DBR) structure, thus the luminous efficiency is greatly improved. The ODR structure is composed of the electrode metal and DBR layer connected with core particles on the DBR layer. After theoretical analysis and calculation, it is shown that, compared with the traditional ITO+DBR structure devices, the average reflectivity is increased from 86.25% to 96.71% under full angle incidence in the wavelength range of 400~550nm. High pressure inversion gallium nitride LED devices were prepared with series-wound traditional ITO+DBR structure and the three core grains of the ODR structure. The device size is 0.2mm×0.66mm, the effective reflection area is increased by 4.8%, and saturation current is increased by 12mA. After being encapsulated with 3030 stents, and under the test current of 30mA, the voltage is decreased by 0.163V, radiation power is increased by 3.78%, and the luminous efficiency is increased by 5.42% when the color rendering index is 71. The NP-METAL which connected cells of LED was put on the DBR layer and make up the ODR structure, the average reflectance Rave over the wavelength from 400nm to 550nm and the incident angle from 0° to 90° would increase from 86.25% to 96.71%, compared with the traditional structure. The 3 cells connected in series were formed in the 0.2mm×0.66mm HVFC LED chip. Compared to the chip with traditional structure, the chip with ODR structure which had double ISO layers would increase 4.8% effective reflection area, when test current was 30mA bonded in emc3030, could decrease 0.163V Voltage, increase 3.78% radiant powerand increase 5.42% luminous efficiency at Ra 71.